Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange. Keywords: finite element method simulation; laterally aligned nanowires; planar growth; tin oxide; vapor–liquid–solid nanowire growth; Introduction Since the first reports in 1964 by

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• barrier on the NW sidewalls and lateral growth occurs. From the other point-of-view, a very high concentration of Si doping in the case of N-rich GaN planar growth leads to Si surface segregation [31]. When the segregation occurs, the concentration of Si atoms at the crystal surface can be an order of

Formation of Cu_xAu_1−x phases by cold homogenization of Au/Cu nanocrystalline thin films

• Alona Tynkova,
• Gabor L. Katona,
• Gabor A. Langer,
• Sergey I. Sidorenko,
• Svetlana M. Voloshko and
• Dezso L. Beke

Beilstein J. Nanotechnol. 2014, 5, 1491–1500, doi:10.3762/bjnano.5.162

• several orders of magnitude, depending on the type of GB structure (low or high angle GBs [5], triple junctions [6]). Furthermore it can be observed at very low temperatures that the morphology of the formation and the growth of the new phase(s) can be different from the usual planar growth of a reaction

• thin film couples can be different from the planar growth mode: Instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase grows by the motion of the formed new interfaces perpendicular to the GBs. Thus, the